STMicroelectronics STripFET P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6

RS Stock No.: 792-5717Brand: STMicroelectronicsManufacturers Part No.: STD26P3LLH6
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

2.4mm

Product details

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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EGP 902.20

EGP 90.22 Each (In a Pack of 10) (ex VAT)

STMicroelectronics STripFET P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10EGP 902.20
20EGP 1,804.40
30EGP 2,706.60
40EGP 3,608.80
50EGP 4,511.00
60EGP 5,413.20
70EGP 6,315.40
80EGP 7,217.60
90EGP 8,119.80
100EGP 9,022.00
110EGP 9,924.20
120EGP 10,826.40
130EGP 11,728.60
140EGP 12,630.80
150EGP 13,533.00

EGP 902.20

EGP 90.22 Each (In a Pack of 10) (ex VAT)

STMicroelectronics STripFET P-Channel MOSFET, 12 A, 30 V, 3-Pin DPAK STD26P3LLH6

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10EGP 902.20
20EGP 1,804.40
30EGP 2,706.60
40EGP 3,608.80
50EGP 4,511.00
60EGP 5,413.20
70EGP 6,315.40
80EGP 7,217.60
90EGP 8,119.80
100EGP 9,022.00
110EGP 9,924.20
120EGP 10,826.40
130EGP 11,728.60
140EGP 12,630.80
150EGP 13,533.00

Stock information temporarily unavailable.

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Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

30 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.6mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Height

2.4mm

Product details

P-Channel STripFET™ Power MOSFET, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more