Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.15 x 15.75 x 5.15mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
EGP 5,408.70
EGP 180.29 Each (In a Tube of 30) (ex VAT)
30
EGP 5,408.70
EGP 180.29 Each (In a Tube of 30) (ex VAT)
30
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Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
125 W
Minimum DC Current Gain
10
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.15 x 15.75 x 5.15mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.