Infineon N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF

RS Stock No.: 215-2577Brand: InfineonManufacturers Part No.: IRF6668TRPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.015 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Number of Elements per Chip

1

Transistor Material

Si

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Stock information temporarily unavailable.

EGP 366,096.00

EGP 76.27 Each (On a Reel of 4800) (ex VAT)

Infineon N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF

4800

Available in multiples of 4800
4800EGP 366,096.00
9600EGP 732,192.00
14400EGP 1,098,288.00
19200EGP 1,464,384.00
24000EGP 1,830,480.00
28800EGP 2,196,576.00
33600EGP 2,562,672.00
38400EGP 2,928,768.00
43200EGP 3,294,864.00
48000EGP 3,660,960.00
52800EGP 4,027,056.00
57600EGP 4,393,152.00
62400EGP 4,759,248.00
67200EGP 5,125,344.00
72000EGP 5,491,440.00

EGP 366,096.00

EGP 76.27 Each (On a Reel of 4800) (ex VAT)

Infineon N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF
Stock information temporarily unavailable.

4800

Available in multiples of 4800
4800EGP 366,096.00
9600EGP 732,192.00
14400EGP 1,098,288.00
19200EGP 1,464,384.00
24000EGP 1,830,480.00
28800EGP 2,196,576.00
33600EGP 2,562,672.00
38400EGP 2,928,768.00
43200EGP 3,294,864.00
48000EGP 3,660,960.00
52800EGP 4,027,056.00
57600EGP 4,393,152.00
62400EGP 4,759,248.00
67200EGP 5,125,344.00
72000EGP 5,491,440.00

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Series

HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.015 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more