Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1

RS Stock No.: 222-4707Brand: InfineonManufacturers Part No.: IPP65R110CFDAAKSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

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Stock information temporarily unavailable.

EGP 5,252.22

EGP 2,626.11 Each (In a Pack of 2) (ex VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2EGP 5,252.22
4EGP 10,504.44
6EGP 15,756.66
8EGP 21,008.88
10EGP 26,261.10
12EGP 31,513.32
14EGP 36,765.54
16EGP 42,017.76
18EGP 47,269.98
20EGP 52,522.20
22EGP 57,774.42
24EGP 63,026.64
26EGP 68,278.86
28EGP 73,531.08
30EGP 78,783.30

EGP 5,252.22

EGP 2,626.11 Each (In a Pack of 2) (ex VAT)

Infineon CoolMOS™ Silicon N-Channel MOSFET, 31.2 A, 650 V, 3-Pin TO-220 IPP65R110CFDAAKSA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2EGP 5,252.22
4EGP 10,504.44
6EGP 15,756.66
8EGP 21,008.88
10EGP 26,261.10
12EGP 31,513.32
14EGP 36,765.54
16EGP 42,017.76
18EGP 47,269.98
20EGP 52,522.20
22EGP 57,774.42
24EGP 63,026.64
26EGP 68,278.86
28EGP 73,531.08
30EGP 78,783.30

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31.2 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.11 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more