Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.82mm
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
EGP 1,362.90
EGP 272.58 Each (In a Pack of 5) (ex VAT)
Standard
5
EGP 1,362.90
EGP 272.58 Each (In a Pack of 5) (ex VAT)
Standard
5
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
250 V
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.82mm
Product details