Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
119 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
576 W
Number of Transistors
1
Package Type
TO-247
Configuration
Single
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Country of Origin
China
Stock information temporarily unavailable.
P.O.A.
STMicroelectronics STGWA50M65DF2AG Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole
Select packaging type
Production pack (Tube)
1
P.O.A.
STMicroelectronics STGWA50M65DF2AG Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type
Production pack (Tube)
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
119 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
576 W
Number of Transistors
1
Package Type
TO-247
Configuration
Single
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Country of Origin
China