IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P

RS Stock No.: 168-4470Brand: IXYSManufacturers Part No.: IXFH170N10P
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

714 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

16.26mm

Typical Gate Charge @ Vgs

198 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

5.3mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

EGP 28,933.80

EGP 964.46 Each (In a Tube of 30) (ex VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P

30

Available in multiples of 30
30EGP 28,933.80
60EGP 57,867.60
90EGP 86,801.40
120EGP 115,735.20
150EGP 144,669.00
180EGP 173,602.80
210EGP 202,536.60
240EGP 231,470.40
270EGP 260,404.20
300EGP 289,338.00
330EGP 318,271.80
360EGP 347,205.60
390EGP 376,139.40
420EGP 405,073.20
450EGP 434,007.00

EGP 28,933.80

EGP 964.46 Each (In a Tube of 30) (ex VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 170 A, 100 V, 3-Pin TO-247 IXFH170N10P
Stock information temporarily unavailable.

30

Available in multiples of 30
30EGP 28,933.80
60EGP 57,867.60
90EGP 86,801.40
120EGP 115,735.20
150EGP 144,669.00
180EGP 173,602.80
210EGP 202,536.60
240EGP 231,470.40
270EGP 260,404.20
300EGP 289,338.00
330EGP 318,271.80
360EGP 347,205.60
390EGP 376,139.40
420EGP 405,073.20
450EGP 434,007.00

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

170 A

Maximum Drain Source Voltage

100 V

Package Type

TO-247

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

714 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

16.26mm

Typical Gate Charge @ Vgs

198 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

5.3mm

Height

21.46mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more