Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1

RS Stock No.: 284-792Brand: InfineonManufacturers Part No.: ISZ15EP15LMATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS Power Transistor

Package Type

PG-TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

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EGP 905.60

EGP 45.28 Each (In a Pack of 20) (ex VAT)

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20EGP 905.60
40EGP 1,811.20
60EGP 2,716.80
80EGP 3,622.40
100EGP 4,528.00
120EGP 5,433.60
140EGP 6,339.20
160EGP 7,244.80
180EGP 8,150.40
200EGP 9,056.00
220EGP 9,961.60
240EGP 10,867.20
260EGP 11,772.80
280EGP 12,678.40
300EGP 13,584.00

EGP 905.60

EGP 45.28 Each (In a Pack of 20) (ex VAT)

Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 2.7 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 20.

Production -

Available in multiples of 20.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

20

Available in multiples of 20
20EGP 905.60
40EGP 1,811.20
60EGP 2,716.80
80EGP 3,622.40
100EGP 4,528.00
120EGP 5,433.60
140EGP 6,339.20
160EGP 7,244.80
180EGP 8,150.40
200EGP 9,056.00
220EGP 9,961.60
240EGP 10,867.20
260EGP 11,772.80
280EGP 12,678.40
300EGP 13,584.00

Stock information temporarily unavailable.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS Power Transistor

Package Type

PG-TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more