Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
EGP 8,852.00
EGP 177.04 Each (In a Tube of 50) (ex VAT)
50
EGP 8,852.00
EGP 177.04 Each (In a Tube of 50) (ex VAT)
50
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.125 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si