Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
515 W
Number of Transistors
7
Stock information temporarily unavailable.
EGP 18,204.86
EGP 18,204.86 Each (ex VAT)
Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V
Select packaging type
Standard
1
EGP 18,204.86
EGP 18,204.86 Each (ex VAT)
Infineon FP100R12KT4BOSA1 IGBT Module, 100 A 1200 V
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
515 W
Number of Transistors
7