Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
750 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
Malaysia
Stock information temporarily unavailable.
P.O.A.
Infineon AIM SiC N-Channel MOSFET, 23 A, 750 V, 4-Pin PG-TO247-4 AIMZA75R090M1HXKSA1
1
P.O.A.
Infineon AIM SiC N-Channel MOSFET, 23 A, 750 V, 4-Pin PG-TO247-4 AIMZA75R090M1HXKSA1
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
750 V
Series
AIM
Package Type
PG-TO247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
Malaysia