Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
750 V
Series
AIM
Package Type
PG-TO263-7
Mounting Type
Surface Mount
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
Malaysia
Stock information temporarily unavailable.
P.O.A.
Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1
1
P.O.A.
Infineon AIM SiC N-Channel MOSFET, 24 A, 750 V, 7-Pin PG-TO263-7 AIMBG75R090M1HXTMA1
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
750 V
Series
AIM
Package Type
PG-TO263-7
Mounting Type
Surface Mount
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
Malaysia