Vishay N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK SUM45N25-58-E3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
58 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
95 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
Taiwan, Province Of China
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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EGP 401.10
EGP 401.10 Each (ex VAT)
Standard
1
EGP 401.10
EGP 401.10 Each (ex VAT)
Standard
1
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
45 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
58 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
95 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Country of Origin
Taiwan, Province Of China
Product details
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products