P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH129DN-T1-GE3

RS Stock No.: 178-3695Brand: Vishay SiliconixManufacturers Part No.: SiSH129DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

47.5 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-50 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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EGP 16.08

Each (On a Reel of 3000) (ex VAT)

P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH129DN-T1-GE3

3000

Available in multiples of 3000
3000EGP 48,240.00
6000EGP 96,480.00
9000EGP 144,720.00
12000EGP 192,960.00
15000EGP 241,200.00
18000EGP 289,440.00
21000EGP 337,680.00
24000EGP 385,920.00
27000EGP 434,160.00
30000EGP 482,400.00
33000EGP 530,640.00
36000EGP 578,880.00
39000EGP 627,120.00
42000EGP 675,360.00
45000EGP 723,600.00

EGP 16.08

Each (On a Reel of 3000) (ex VAT)

P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH129DN-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000EGP 48,240.00
6000EGP 96,480.00
9000EGP 144,720.00
12000EGP 192,960.00
15000EGP 241,200.00
18000EGP 289,440.00
21000EGP 337,680.00
24000EGP 385,920.00
27000EGP 434,160.00
30000EGP 482,400.00
33000EGP 530,640.00
36000EGP 578,880.00
39000EGP 627,120.00
42000EGP 675,360.00
45000EGP 723,600.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET

Package Type

1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

47.5 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-50 °C

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more