Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
20 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
4.85mm
Typical Gate Charge @ Vgs
12.3 nC @ 4.5 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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EGP 4.79
Each (On a Reel of 2500) (ex VAT)
2500
EGP 4.79
Each (On a Reel of 2500) (ex VAT)
2500
Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
20 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
31 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
4.85mm
Typical Gate Charge @ Vgs
12.3 nC @ 4.5 V
Width
3.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V