Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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EGP 13,540.00
EGP 270.80 Each (In a Tube of 50) (ex VAT)
50
EGP 13,540.00
EGP 270.80 Each (In a Tube of 50) (ex VAT)
50
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.