STMicroelectronics N-Channel MOSFET, 20 A, 125 V, 4-Pin M174 SD2931-10W

RS Stock No.: 917-3356Brand: STMicroelectronicsManufacturers Part No.: SD2931-10W
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

125 V

Package Type

M174

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation

389 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

24.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

26.67mm

Maximum Operating Temperature

+200 °C

Height

4.11mm

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

EGP 6,951.45

EGP 6,951.45 Each (ex VAT)

STMicroelectronics N-Channel MOSFET, 20 A, 125 V, 4-Pin M174 SD2931-10W
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 6,951.45
2EGP 13,902.90
3EGP 20,854.35
4EGP 27,805.80
5EGP 34,757.25
6EGP 41,708.70
7EGP 48,660.15
8EGP 55,611.60
9EGP 62,563.05
10EGP 69,514.50
11EGP 76,465.95
12EGP 83,417.40
13EGP 90,368.85
14EGP 97,320.30
15EGP 104,271.75

EGP 6,951.45

EGP 6,951.45 Each (ex VAT)

STMicroelectronics N-Channel MOSFET, 20 A, 125 V, 4-Pin M174 SD2931-10W
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1EGP 6,951.45
2EGP 13,902.90
3EGP 20,854.35
4EGP 27,805.80
5EGP 34,757.25
6EGP 41,708.70
7EGP 48,660.15
8EGP 55,611.60
9EGP 62,563.05
10EGP 69,514.50
11EGP 76,465.95
12EGP 83,417.40
13EGP 90,368.85
14EGP 97,320.30
15EGP 104,271.75

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

125 V

Package Type

M174

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation

389 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

24.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

26.67mm

Maximum Operating Temperature

+200 °C

Height

4.11mm

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more