ROHM RU1J002YN N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-323 RU1J002YNTCL

RS Stock No.: 124-6836Brand: ROHMManufacturers Part No.: RU1J002YNTCL
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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Series

RU1J002YN

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.35mm

Number of Elements per Chip

1

Length

2.1mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Stock information temporarily unavailable.

EGP 477.00

EGP 4.77 Each (In a Pack of 100) (ex VAT)

ROHM RU1J002YN N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-323 RU1J002YNTCL
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 100
100EGP 477.00
200EGP 954.00
300EGP 1,431.00
400EGP 1,908.00
500EGP 2,385.00
600EGP 2,862.00
700EGP 3,339.00
800EGP 3,816.00
900EGP 4,293.00
1000EGP 4,770.00
1100EGP 5,247.00
1200EGP 5,724.00
1300EGP 6,201.00
1400EGP 6,678.00
1500EGP 7,155.00

EGP 477.00

EGP 4.77 Each (In a Pack of 100) (ex VAT)

ROHM RU1J002YN N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-323 RU1J002YNTCL
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 100
100EGP 477.00
200EGP 954.00
300EGP 1,431.00
400EGP 1,908.00
500EGP 2,385.00
600EGP 2,862.00
700EGP 3,339.00
800EGP 3,816.00
900EGP 4,293.00
1000EGP 4,770.00
1100EGP 5,247.00
1200EGP 5,724.00
1300EGP 6,201.00
1400EGP 6,678.00
1500EGP 7,155.00

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Series

RU1J002YN

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

150 mW

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.35mm

Number of Elements per Chip

1

Length

2.1mm

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more