Technical Document
Specifications
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 → 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SSMini3 F3 B
Pin Count
3
Dimensions
1.6 x 0.85 x 0.7mm
Maximum Operating Temperature
+150 °C
Length
1.6mm
Height
0.7mm
Width
0.85mm
Country of Origin
China
Product details
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
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P.O.A.
20
Technical Document
Specifications
Brand
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 → 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SSMini3 F3 B
Pin Count
3
Dimensions
1.6 x 0.85 x 0.7mm
Maximum Operating Temperature
+150 °C
Length
1.6mm
Height
0.7mm
Width
0.85mm
Country of Origin
China
Product details
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.