onsemi NVTFS6H850N N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN NVTFS6H850NTAG

RS Stock No.: 172-3379Brand: onsemiManufacturers Part No.: NVTFS6H850NTAG
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

80 V

Series

NVTFS6H850N

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Stock information temporarily unavailable.

EGP 1,516.25

EGP 60.65 Each (In a Pack of 25) (ex VAT)

onsemi NVTFS6H850N N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN NVTFS6H850NTAG
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25EGP 1,516.25
50EGP 3,032.50
75EGP 4,548.75
100EGP 6,065.00
125EGP 7,581.25
150EGP 9,097.50
175EGP 10,613.75
200EGP 12,130.00
225EGP 13,646.25
250EGP 15,162.50
275EGP 16,678.75
300EGP 18,195.00
325EGP 19,711.25
350EGP 21,227.50
375EGP 22,743.75

EGP 1,516.25

EGP 60.65 Each (In a Pack of 25) (ex VAT)

onsemi NVTFS6H850N N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN NVTFS6H850NTAG
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 25.

Production -

Available in multiples of 25.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

25

Available in multiples of 25
25EGP 1,516.25
50EGP 3,032.50
75EGP 4,548.75
100EGP 6,065.00
125EGP 7,581.25
150EGP 9,097.50
175EGP 10,613.75
200EGP 12,130.00
225EGP 13,646.25
250EGP 15,162.50
275EGP 16,678.75
300EGP 18,195.00
325EGP 19,711.25
350EGP 21,227.50
375EGP 22,743.75

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

80 V

Series

NVTFS6H850N

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

3.15mm

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Automotive Standard

AEC-Q101

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more