N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon SPB20N60C3ATMA1

RS Stock No.: 898-6882PBrand: InfineonManufacturers Part No.: SPB20N60C3ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.31mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Width

11.05mm

Transistor Material

Si

Series

CoolMOS C3

Height

4.57mm

Minimum Operating Temperature

-55 °C

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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EGP 110.64

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon SPB20N60C3ATMA1
Select packaging type

EGP 110.64

Each (Supplied on a Reel) (ex VAT)

N-Channel MOSFET, 21 A, 650 V, 3-Pin D2PAK Infineon SPB20N60C3ATMA1
Stock information temporarily unavailable.
Select packaging type

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

208 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.31mm

Typical Gate Charge @ Vgs

87 nC @ 10 V

Width

11.05mm

Transistor Material

Si

Series

CoolMOS C3

Height

4.57mm

Minimum Operating Temperature

-55 °C

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more