Infineon OptiMOS™ N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 BSP372NH6327XTSA1

RS Stock No.: 166-1014Brand: InfineonManufacturers Part No.: BSP372N H6327
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.5mm

Length

6.5mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.6mm

Country of Origin

Malaysia

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

EGP 23,950.00

EGP 23.95 Each (On a Reel of 1000) (ex VAT)

Infineon OptiMOS™ N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 BSP372NH6327XTSA1

EGP 23,950.00

EGP 23.95 Each (On a Reel of 1000) (ex VAT)

Infineon OptiMOS™ N-Channel MOSFET, 1.8 A, 100 V, 3-Pin SOT-223 BSP372NH6327XTSA1
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.8 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.5mm

Length

6.5mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

1.6mm

Country of Origin

Malaysia

Product details

Infineon OptiMOS™ Small Signal MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more