Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 5 V
Maximum Operating Temperature
+150 °C
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Product details
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
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Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 5 V
Maximum Operating Temperature
+150 °C
Width
1.35mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Product details