Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
45 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
45 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
11.04 x 7.74 x 2.66mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
EGP 61.67
EGP 61.67 Each (ex VAT)
1
EGP 61.67
EGP 61.67 Each (ex VAT)
1
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
45 V
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
45 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
11.04 x 7.74 x 2.66mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose NPN Transistors, Over 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.