Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Package Type
AG-ECONOD
Configuration
Dual
Channel Type
N
Transistor Configuration
Common Emitter
Stock information temporarily unavailable.
EGP 23,954.48
EGP 23,954.48 Each (ex VAT)
Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD
Select packaging type
Standard
1
EGP 23,954.48
EGP 23,954.48 Each (ex VAT)
Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Package Type
AG-ECONOD
Configuration
Dual
Channel Type
N
Transistor Configuration
Common Emitter