MOSFETs
MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switc...
Showing 1-20 of 11896 products
Infineon
MOSFET
Type N
-
-
789A
25V
-
-
OptiMOS 5
PG-WHSON-8
-
Surface
-
-
8
0.29mΩ
-
-
-
Enhancement
-
-
278W
-
-
-
-
-55°C
150°C
-
-
-
-
-
-
RoHS Compliant
-
-
-
-
-
-
-
No
-
-
-
-
Infineon
MOSFET
Type N
-
-
220A
100V
-
-
OptiMOS 7
PG-TDSON-8-53
-
Surface
-
-
8
2.1mΩ
-
-
-
Enhancement
-
-
217W
-
-
-
-
-55°C
175°C
-
-
-
-
-
-
No
-
-
-
-
-
-
-
No
-
-
-
-
Infineon
MOSFET
Type N
-
-
274A
80V
-
-
OptiMOS 7
PG-TDSON-8-53
-
Surface
-
-
8
1.30mΩ
-
-
-
Enhancement
-
-
219W
-
-
-
-
-55°C
175°C
-
-
-
-
-
-
RoHS Compliant
-
-
-
-
-
-
-
No
-
-
-
-
Infineon
MOSFET
Type N
-
-
275A
60V
-
-
OptiMOS-TM5
PG-TDSON-8 FL
-
Surface
-
-
8
1.55mΩ
-
-
-
Enhancement
-
-
217W
-
-
-
-
-55°C
175°C
-
-
-
-
-
-
No
-
-
-
-
-
-
-
No
-
-
-
-
Infineon
MOSFET
Type N
-
-
656A
40V
-
-
OptiMOS-TM6
PG-TSON-12
-
Surface
-
-
12
0.36mΩ
-
-
-
Enhancement
-
-
300W
-
-
-
-
-55°C
175°C
-
-
-
-
-
-
No
-
-
-
-
-
-
-
No
-
-
-
-
STMicroelectronics
Power MOSFET
P-Channel
-
-
6A
700V
-
-
G-HEMT
TO-252
-
Surface Mount
-
-
2
350mΩ
-
-
-
Enhancement
-
-
47W
-
1.5nC
-
-
-55°C
150°C
-
-
-
-
2.4mm
6.2mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Power MOSFET
P-Channel
-
-
6A
700V
-
-
G-HEMT
TO-252
-
Surface Mount
-
-
2
350mΩ
-
-
-
Enhancement
-
-
47W
-
1.5nC
-
-
-55°C
150°C
-
-
-
-
2.4mm
6.2mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Transistor
P-Channel
-
-
10A
700V
-
-
G-HEMT
PowerFLAT
-
Surface Mount
-
-
8
240mΩ
-
-
-
Enhancement
-
-
76W
-
2nC
-
-
-55°C
150°C
-
-
-
-
0.9mm
8.1mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Transistor
P-Channel
-
-
11.5A
700V
-
-
G-HEMT
PowerFLAT
-
Surface Mount
-
-
8
190mΩ
-
-
-
Enhancement
-
-
83W
-
2.8nC
-
-
-55°C
150°C
-
-
-
-
0.9mm
8.1mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Transistor
P-Channel
-
-
17A
700V
-
-
G-HEMT
PowerFLAT
-
Surface Mount
-
-
8
140mΩ
-
-
-
Enhancement
-
-
113W
-
3.5nC
-
-
-55°C
150°C
-
-
-
-
0.9mm
8.1mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Transistor
P-Channel
-
-
21.7A
700V
-
-
G-HEMT
PowerFLAT
-
Surface Mount
-
-
8
105mΩ
-
-
-
Enhancement
-
-
158W
-
4.8nC
-
-
-55°C
150°C
-
-
-
-
0.9mm
8.1mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Transistor
P-Channel
-
-
26A
700V
-
-
G-HEMT
TO-LL
-
Surface Mount
-
-
13
70mΩ
-
-
-
Enhancement
-
-
231W
-
8.5nC
-
-
-55°C
150°C
-
-
-
-
2.4mm
10.58mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Transistor
P-Channel
-
-
29A
700V
-
-
G-HEMT
PowerFLAT
-
Surface Mount
-
-
8
80mΩ
-
-
-
Enhancement
-
-
188W
-
6.2nC
-
-
-55°C
150°C
-
-
-
-
0.9mm
8.1mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Power MOSFET
N channel
-
-
397A
60V
-
-
STH
H2PAK-2
-
Surface Mount
-
-
2
1.2mΩ
-
-
-
Enhancement
-
-
341W
-
230nC
-
1.2V
-55°C
175°C
-
-
-
-
4.7mm
9.3mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Power MOSFET
N channel
-
-
397A
60V
-
-
STH
H2PAK-2
-
Surface Mount
-
-
2
1.2mΩ
-
-
-
Enhancement
-
-
341W
-
230nC
-
1.2V
-55°C
175°C
-
-
-
-
4.7mm
9.3mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Power MOSFET
N channel
-
-
397A
60V
-
-
STH
H2PAK
-
Surface Mount
-
-
6
1.2mΩ
-
-
-
Enhancement
-
-
341W
-
230nC
-
1.2V
-55°C
175°C
-
-
-
-
4.7mm
9.3mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Power MOSFET
N channel
-
-
397A
60V
-
-
STH
H2PAK
-
Surface Mount
-
-
6
1.2mΩ
-
-
-
Enhancement
-
-
341W
-
230nC
-
1.2V
-55°C
175°C
-
-
-
-
4.7mm
9.3mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Power MOSFET
N channel
-
-
268A
60V
-
-
STL
PowerFLAT
-
Surface Mount
-
-
8
1.3mΩ
-
-
-
Enhancement
-
-
187W
-
145nC
-
1.2V
-55°C
175°C
-
-
-
-
1mm
6.1mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Power MOSFET
N channel
-
-
268A
60V
-
-
STL
PowerFLAT
-
Surface Mount
-
-
8
1.3mΩ
-
-
-
Enhancement
-
-
187W
-
145nC
-
1.2V
-55°C
175°C
-
-
-
-
1mm
6.1mm
-
-
-
-
-
-
-
-
-
-
-
-
-
STMicroelectronics
Power MOSFET
N channel
-
-
100A
80V
-
-
STP
TO-220
-
Through Hole
-
-
3
0.009Ω
-
-
-
Enhancement
-
-
176W
-
100nC
-
1.2V
-55°C
175°C
-
-
-
-
4.6mm
15.75mm
-
-
-
-
-
-
-
-
-
-
-
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-
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