Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh II
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
27nC
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Length
10.1mm
Height
2.4mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Stock information temporarily unavailable.
P.O.A.
Each (On a Reel of 2500) (ex VAT)
2500
P.O.A.
Each (On a Reel of 2500) (ex VAT)
Stock information temporarily unavailable.
2500
Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh II
Package Type
TO-252
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.36Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.5V
Typical Gate Charge Qg @ Vgs
27nC
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Length
10.1mm
Height
2.4mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics Power MOSFET is developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.