Technical Document
Specifications
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
Si
Transistor Configuration
Common Source
Pin Count
5
Maximum Gate Source Voltage
-20 V, +20 V
Mounting Type
Screw Mount
Maximum Operating Temperature
+200 °C
Maximum Drain Source Voltage
70 V
Maximum Gate Threshold Voltage
7V
Series
TetraFET
Width
6.47mm
Height
4.82mm
Maximum Continuous Drain Current
10 A
Maximum Power Dissipation
175 W
Length
24.76mm
Package Type
DK
Brand
SemelabCountry of Origin
United Kingdom
Product details
Fully Moulded Subminiature GB Series
Compact structure, less than 7mm in height excluding operating plunger
Pitch between terminals 2.54mm
Fully moulded construction with excellent electrostatic voltage resistance
Completely washable high ingress protection design
Certification: IECQ
Note: Button is optional, see later in this section
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EGP 23,795.04
Each (ex VAT)
Standard
1
EGP 23,795.04
Each (ex VAT)
Standard
1
Technical Document
Specifications
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Transistor Material
Si
Transistor Configuration
Common Source
Pin Count
5
Maximum Gate Source Voltage
-20 V, +20 V
Mounting Type
Screw Mount
Maximum Operating Temperature
+200 °C
Maximum Drain Source Voltage
70 V
Maximum Gate Threshold Voltage
7V
Series
TetraFET
Width
6.47mm
Height
4.82mm
Maximum Continuous Drain Current
10 A
Maximum Power Dissipation
175 W
Length
24.76mm
Package Type
DK
Brand
SemelabCountry of Origin
United Kingdom
Product details
Fully Moulded Subminiature GB Series
Compact structure, less than 7mm in height excluding operating plunger
Pitch between terminals 2.54mm
Fully moulded construction with excellent electrostatic voltage resistance
Completely washable high ingress protection design
Certification: IECQ
Note: Button is optional, see later in this section