Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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P.O.A.
Production pack (Reel)
100
P.O.A.
Production pack (Reel)
100
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
200, 420
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Country of Origin
China