Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
-5 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-80 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-0.00005mA
Height
1.7mm
Width
3.7mm
Maximum Power Dissipation
1.25 W
Minimum Operating Temperature
-65 °C
Dimensions
6.7 x 3.7 x 1.7mm
Maximum Operating Temperature
+150 °C
Length
6.7mm
Country of Origin
China
Product details
Darlington Transistors, Nexperia
Bipolar Transistors, Nexperia
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EGP 35.12
Each (On a Reel of 1000) (ex VAT)
1000
EGP 35.12
Each (On a Reel of 1000) (ex VAT)
1000
Technical Document
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum Continuous Collector Current
-1 A
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
-5 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3 + Tab
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
-1.9 V
Maximum Collector Base Voltage
-80 V
Maximum Collector Emitter Saturation Voltage
-1.3 V
Maximum Collector Cut-off Current
-0.00005mA
Height
1.7mm
Width
3.7mm
Maximum Power Dissipation
1.25 W
Minimum Operating Temperature
-65 °C
Dimensions
6.7 x 3.7 x 1.7mm
Maximum Operating Temperature
+150 °C
Length
6.7mm
Country of Origin
China
Product details