N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXYS IXFB90N85X

RS Stock No.: 146-4383Brand: IXYSManufacturers Part No.: IXFB90N85XIMPA: 0
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

1

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

1.4V

Mounting Type

Through Hole

Maximum Operating Temperature

+150 °C

Minimum Gate Threshold Voltage

3.5V

Maximum Gate Threshold Voltage

5.5V

Series

HiperFET

Maximum Drain Source Voltage

850 V

Maximum Gate Source Voltage

±30 V

Maximum Power Dissipation

1.79 kW

Width

5.31mm

Length

20.29mm

Height

26.59mm

Maximum Continuous Drain Current

90 A

Brand

IXYS

Maximum Drain Source Resistance

41 mΩ

Package Type

PLUS264

Typical Gate Charge @ Vgs

340 @ 10 V nC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

EGP 4,405.65

Each (ex VAT)

N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXYS IXFB90N85X

1

Available in multiples of 1
1EGP 4,405.65
2EGP 8,811.30
3EGP 13,216.95
4EGP 17,622.60
5EGP 22,028.25
6EGP 26,433.90
7EGP 30,839.55
8EGP 35,245.20
9EGP 39,650.85
10EGP 44,056.50
11EGP 48,462.15
12EGP 52,867.80
13EGP 57,273.45
14EGP 61,679.10
15EGP 66,084.75

EGP 4,405.65

Each (ex VAT)

N-Channel MOSFET, 90 A, 850 V, 3-Pin PLUS264 IXYS IXFB90N85X
Stock information temporarily unavailable.

1

Available in multiples of 1
1EGP 4,405.65
2EGP 8,811.30
3EGP 13,216.95
4EGP 17,622.60
5EGP 22,028.25
6EGP 26,433.90
7EGP 30,839.55
8EGP 35,245.20
9EGP 39,650.85
10EGP 44,056.50
11EGP 48,462.15
12EGP 52,867.80
13EGP 57,273.45
14EGP 61,679.10
15EGP 66,084.75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Mode

Enhancement

Number of Elements per Chip

1

Channel Type

N

Pin Count

3

Minimum Operating Temperature

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

1.4V

Mounting Type

Through Hole

Maximum Operating Temperature

+150 °C

Minimum Gate Threshold Voltage

3.5V

Maximum Gate Threshold Voltage

5.5V

Series

HiperFET

Maximum Drain Source Voltage

850 V

Maximum Gate Source Voltage

±30 V

Maximum Power Dissipation

1.79 kW

Width

5.31mm

Length

20.29mm

Height

26.59mm

Maximum Continuous Drain Current

90 A

Brand

IXYS

Maximum Drain Source Resistance

41 mΩ

Package Type

PLUS264

Typical Gate Charge @ Vgs

340 @ 10 V nC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more