Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1

RS Stock No.: 262-5865Brand: InfineonManufacturers Part No.: IPD029N04NF2SATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

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EGP 86.61

Each (In a Pack of 5) (ex VAT)

Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5EGP 433.05
10EGP 866.10
15EGP 1,299.15
20EGP 1,732.20
25EGP 2,165.25
30EGP 2,598.30
35EGP 3,031.35
40EGP 3,464.40
45EGP 3,897.45
50EGP 4,330.50
55EGP 4,763.55
60EGP 5,196.60
65EGP 5,629.65
70EGP 6,062.70
75EGP 6,495.75

EGP 86.61

Each (In a Pack of 5) (ex VAT)

Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5EGP 433.05
10EGP 866.10
15EGP 1,299.15
20EGP 1,732.20
25EGP 2,165.25
30EGP 2,598.30
35EGP 3,031.35
40EGP 3,464.40
45EGP 3,897.45
50EGP 4,330.50
55EGP 4,763.55
60EGP 5,196.60
65EGP 5,629.65
70EGP 6,062.70
75EGP 6,495.75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

131 A

Maximum Drain Source Voltage

40 V

Package Type

PG-TO252-3

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more